Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
نویسندگان
چکیده
Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 C showed better transistor properties than those grown at 120 C. Channels with higher zinc to tin ratio ( 3–4) also performed better than ones with lower ratios ( 1–3). VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752727]
منابع مشابه
Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors
The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...
متن کاملHigh mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm2 V−1 s−1 are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices with turn-on voltage of 0–15 and −5–5 V, respectively. Under b...
متن کاملEffect of direct current sputtering power on the behavior of amorphous indium-gallium- zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation
Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...
متن کاملInvestigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors
Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...
متن کاملHigh Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide
Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various tempe...
متن کامل